Transistor device and method of manufacture thereof

A method of manufacturing a complimentary metal oxide semiconductor (CMOS) device, the method comprising:

• providing a workpiece, the workpiece comprising a first region and a second region;
• forming a gate dielectric material over the workpiece, the gate dielectric material comprising a dielectric constant of about 4.0 or greater;
• forming a first gate material over the gate dielectric material, the first gate material comprising a first metal;
• forming a second gate material over the first gate material;
• implanting a first material into said second gate material over the second region of the workpiece to form a third material in the second region of the workpiece, the third gate material comprising a second metal, the second metal comprising the first metal and the first material;
• and
• patterning the first gate material, the second gate material, and the gate dielectric material to form a first transistor in the first region of the workpiece and a second transistor in the second region of the workpiece, the first transistor including a first gate comprised of the first gate material, and the second transistor including a second gate comprised of the second gate material, wherein forming either the first transistor or the second transistor comprises forming a positive channel metal oxide semiconductor (PMOS) device or a negative channel metal oxide semiconductor (NMOS) device.

A method of manufacturing a semiconductor device, the method comprising:

• providing a workpiece, the workpiece comprising a first region and a second region;
• forming a gate dielectric material over the workpiece;
• forming a first gate metal over the gate dielectric material;
• forming a second gate metal over the first gate metal;
• implanting a material into at least the second gate metal over the second region of the workpiece;
• and
• patterning the first gate metal, the second gate metal, and the gate dielectric material to form a first transistor in the first region of the workpiece and a second transistor in the second region of the workpiece, the first transistor including a first gate comprised of the first gate metal, and the second transistor including a second gate comprised of the second gate metal.