CMOS image sensor and method for fabricating the same
AssigneeDongbu Electronics Co., Ltd.
InventorIn Su Kim
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Abstract
A complementary metal-oxide semiconductor (CMOS) image sensor and a method for fabricating the same are disclosed. The image sensor includes a sub-layer having a photodiode and a plurality of transistors formed thereon, a pad insulating layer formed on the sub-layer, a micro-lens formed on the pad insulating layer, the micro-lens including a first insulating layer having an uneven surface and a second insulating layer covering upper and side surfaces of a projected portion of the first insulating layer to form a dome shape, and a planarization layer formed on the micro-lens, and a color filter formed on the planarization layer.
Claims6
A method for fabricating a complementary metal-oxide semiconductor image sensor, comprising the steps of:
- forming a pad insulating layer formed on a sub-layer having a photodiode and a plurality of transistors formed thereon;
- forming a first insulating layer having an uneven surface on the pad insulating layer;
- depositing a second insulating layer on the first insulating layer by using a high deposition plasma process;
- additionally depositing the second insulating layer, so as to form a dome-shaped portion over a projected portion of an uneven surface of the first insulating;
- and
- etching-back the second insulating layer so that the second insulating layer covers upper and side surfaces of the projected portion of the first insulating layer to form the dome-shaped portion, thereby forming a micro-lens including the projected portion of the first insulating layer and the dome-shaped portion of the second insulating layer covering the projected portion of the first insulating layer.
Dependencies are inferred from the claim text.