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AssigneesRenesas Technology Corp., Dai Nippon Printing Co., Ltd.
InventorsNorio Hasegawa, Katsuya Hayano, Shinji Kubo, Yasuhiro Koizumi, Yasushi Kawai
Estimating the term…
A mask fabrication time is shortened. By patterning an electron-sensitive resist film coated on a main surface of a mask substrate, a pellicle is mounted on the main surface of the mask substrate immediately after a resist pattern made from an electron beam sensitive resist film and having light-shielding characteristics with respect to exposure light is formed. Subsequently, by irradiating a laser beam to defect made from the electron beam sensitive resist film with the pellicle being mounted on the mask substrate, the defect is removed. Since the defect can be removed without removing the pellicle, the mask fabrication time can be shortened.
A mask fabrication method comprising the steps of:
A mask fabrication method comprising the steps of:
A mask fabrication method comprising the steps of:
A fabrication method of semiconductor integrated circuit device, comprising the steps of:
Dependencies are inferred from the claim text.