Etching method and etching device
AssigneeSony Corporation
InventorsHayato Iwamoto, Kei Kinoshita, Hajime Ugajin
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Abstract
An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L1 at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L1, a diluting liquid L2 for the etchant liquid L1 is discharged at a thin portion of the film for processing.
Claims4
An etching method in which the film thickness profile of a film for processing formed on a wafer is ascertained in advance and wet etching is performed by discharging etchant liquid at a thick portion of said film for processing, wherein:
- simultaneously with the discharge of said etchant liquid, a diluting liquid for the etchant liquid is discharged at a thin portion of said film for processing;
- and
- inert gas is sprayed, on the outer side of the position where said etchant liquid is discharged, at the periphery portion of the wafer so as to increase the fluid speed of the etchant liquid.
Dependencies are inferred from the claim text.