Exposure method for correcting a focal point, and a method for manufacturing a semiconductor device

A method for manufacturing a semiconductor device, comprising:

• illuminating a mask a single time, said mask being a mask in which a mask-pattern including at least a set of a first mask-pattern and a second mask-pattern mutually different in shape is formed, said mask being illuminated from a direction in which a point located off an optical axis of an exposure apparatus is a center of illumination, using an asymmetric illumination light to the oDtical axis, and exposing and projecting an image of said mask-pattern toward an image-receiving element, said asymmetric illumination light having a single chief ray incidence direction;
• measuring a mutual relative distance between images of said first and second mask-patterns exposed and projected on said image-receiving element, thereby inspecting a state of an optical system of said exposure apparatus;
• setting said optical system of said exposure apparatus in an appropriate state on a basis of a result of said measurement;
• disposing a semiconductor substrate having a photosensitive material provided thereon on a principal plane at an appropriate focal point of a projecting optical system of said exposure apparatus;
• and
• forming a resist-pattern by transferring an image of a mask-pattern for manufacturing a semiconductor on said photosensitive material.

A method for manufacturing a semiconductor device, comprising:

• illuminating a mask a single time, said mask being a mask in which a mask-pattern including at least a set of a first mask-pattern and a second mask-pattern mutually different in shape is formed, said mask being illuminated from a direction in which a point located off an optical axis of an exposure apparatus is a center of illumination, using an asymmetric illumination light to the optical axis, and exposing and projecting an image of said mask-pattern toward an image-receiving element, said asymmetric illumination light having a single chief ray incidence direction;
• measuring a mutual relative distance between images of said first and second mask-patterns exposed and projected on said image-receiving element, thereby measuring a focal point of a projecting optical system of said exposure apparatus;
• setting said focal point of said projecting optical system in an appropriate state on a basis of a result of said measurement, and disposing a semiconductor substrate having a photosensitive material provided thereon on a principal plane at an appropriate focal point of said projecting optical system;
• and
• forming a resist-pattern by transferring an image of a mask-pattern for manufacturing a semiconductor on said photosensitive material.