Semiconductor light-emitting device having annular shape light emitting region and current blocking layer

A semiconductor light-emitting device comprising:

• a semiconductor substrate;
• a light-emitting layer formed on the semiconductor substrate;
• a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission;
• a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer;
• a front electrode formed on the current-spreading layer;
• a rear electrode formed on a rear side of the semiconductor substrate,
• wherein the current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape;
• wherein the front electrode and the central region of the current-blocking layer are opposed to each other;
• wherein the front electrode has an outer contour that is substantially evenly spaced from an inner contour of the light-emitting region;
• wherein the light-emitting region has a circularly annular shape, and the front electrode has a circular shape;
• and
• wherein the radius of the inner perimeter of the circularly annular light emitting region is 1.3 to 1.7 times the radius of the outer perimeter of the circular front electrode.

A semiconductor light-emitting device comprising:

• a semiconductor substrate;
• a light-emitting layer formed on the semiconductor substrate;
• a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission;
• a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer;
• a front electrode formed on the current-spreading layer;
• a rear electrode formed on a rear side of the semiconductor substrate,
• wherein the current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape;
• wherein the front electrode and the central region of the current-blocking layer are opposed to each other, wherein the distance between the inner and outer contours of the annular light-emitting region is 25 μm or greater, and the ratio of the maximum to minimum values of said distance is set to 1.4 times or lower.

A semiconductor light-emitting device comprising:

• a semiconductor substrate;
• a light-emitting layer formed on the semiconductor substrate;
• a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission;
• a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer;
• a front electrode formed on the current-spreading layer;
• a rear electrode formed on a rear side of the semiconductor substrate,
• wherein the current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape;
• wherein the front electrode and the central region of the current-blocking layer are opposed to each other,
• wherein the annular light-emitting region has an outer contour that is 15 μm or more apart from an outer contour of the semiconductor light-emitting device.

A semiconductor light-emitting device comprising:

• a semiconductor substrate;
• a light-emitting layer formed on the semiconductor substrate;
• a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission;
• a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer;
• a front electrode formed on the current-spreading layer;
• a rear electrode formed on a rear side of the semiconductor substrate,
• wherein the current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape;
• wherein the front electrode and the central region of the current-blocking layer are opposed to each other;
• wherein the front electrode has an outer contour that is substantially equal in shape and size to an inner contour of the annular light-emitting region, or has an outer contour that falls within the inner contour of the light-emitting region;
• wherein a distance between the inner and outer contours of the annular light-emitting region is 25 μm or greater, and a ratio of the maximum to minimum values of said distance is set to 1.4 times or lower.