Nonvolatile semiconductor memory devices and methods of manufacturing the same

A method for fabricating a nonvolatile memory cell, comprising:

• forming a first memory cell and a second memory cell on a semiconductor substrate, the first and second memory cells being separated by a distance;
• forming a first source and a second source adjacent the first and second memory cells;
• forming a drain between the first and second memory cells;
• forming first and second cap dielectrics on the first and second memory cells, respectively;
• forming first and second sidewall spacers on sidewalls of the first and second memory cells, respectively;
• forming a dielectric layer in direct physical contact with the first and second cap dielectrics and the first and second sidewall spacers on opposite sidewalls of the first and second memory cells;
• forming a drain contact hole in the dielectric layer exposing the drain and the first and second sidewall spacers on one of the opposite sidewalls of each of the first and second memory cells, without exposing either of the first and second cap dielectrics;
• and
• forming a drain contact connected to the drain in the drain contact hole.