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US 7,247,889 B2Granted
III-nitride material structures including silicon substrates
AssigneeNitronex Corporation
InventorsAllen W. Hanson, John Claassen Roberts, Edwin L. Piner, Pradeep Rajagopal
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Abstract
III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.
Claims32
A semiconductor structure comprising:
- a silicon substrate having a resistivity of greater than 102 Ohms-cm, the silicon substrate including a top surface region having a peak free carrier concentration of less than 1017/cm3;
- and
- a III-nitride material region formed over the top surface of the silicon substrate.
A semiconductor structure comprising:
- a silicon substrate;
- and
- a III-nitride material region formed on the silicon substrate,
- wherein the structure has a transmission line loss of less than 1.0 dB/mm over a frequency range between 0 and 5 GHz.
1 more element
Dependencies are inferred from the claim text.