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US 7,247,584 B2Granted
System and method for selectively increasing surface temperature of an object
AssigneeMicron Technology, Inc.
InventorDon Carl Powell
Life of this patent
Estimating the term…
Abstract
A system and method for selectively increasing the thermal effect of a radiant energy source to the surface of an object relative to the substrate is described in the context of rapid thermal processing of semiconductor wafers, and apparatus produced therefrom. A radiation-absorptive atmosphere is introduced between the radiant energy source and the object to increase conductive heat transfer to the surface of the object and reduce the available radiant heat transfer to the substrate, thereby increasing the thermal effect to the surface relative to the substrate.
Claims26
A system comprising:
- a heating chamber and a semiconductor wafer placed in the chamber;
- a radiation source for emitting radiation at least one wavelength in the range of 0.5 μm to 3.0 μm at the semiconductor wafer, the semiconductor wafer including a surface and a glass layer on the surface;
- and
- a radiation-absorptive atmosphere placed within the chamber, the radiation-absorptive atmosphere including H2O to regulate the level of absorptivity of the atmosphere within the heating chamber through a combination of radiation heat transfer from the radiation source and conductive heat transfer from the radiation-absorptive atmosphere to increase a thermal effect delivered to the surface of the semiconductor wafer in relation to a thermal effect delivered to a bulk of the semiconductor wafer to affect reflow of the glass layer in the heating chamber.
1 more element
A system comprising:
- a heating chamber and a semiconductor wafer placed in the chamber, the semiconductor wafer including a surface and a glass layer on the surface;
- a radiation source for emitting radiation at the semiconductor wafer;
- and
- a radiation-absorptive atmosphere placed within the chamber, the radiation-absorptive atmosphere comprises substantially 10–80 mol % Ar, substantially 10–40 mol % H2, and substantially 10–50 mol % H2O to regulate the level of absorptivity of the atmosphere within the heating chamber through a combination of radiation heat transfer from the radiation source and conductive heat transfer from the radiation-absorptive atmosphere to increase a thermal effect delivered to the surface of the semiconductor wafer in relation to a thermal effect delivered to a bulk of the semiconductor wafer to affect reflow of the glass layer in the heating chamber.
1 more element
A system comprising:
- a heating chamber and a semiconductor wafer placed in the chamber, the semiconductor wafer including a surface and a glass layer on the surface;
- a radiation source for emitting radiation of at least one wavelength in the range of 0.5 μm to 3.0 μm at the semiconductor wafer;
- and
- a radiation-absorptive atmosphere placed within the chamber, the radiation-absorptive atmosphere including CO2 to regulate level of absorptivity of the atmosphere within the heating chamber through a combination of radiation heat transfer from the radiation source and conductive heat transfer from the radiation-absorptive atmosphere to increase a thermal effect delivered to the surface of the semiconductor wafer in relation to a thermal effect delivered to a bulk of the semiconductor wafer to affect reflow of the glass layer in the heating chamber.
1 more element
A system comprising:
- a heating chamber and a semiconductor wafer placed in the chamber, the semiconductor wafer including a surface and a glass layer on the surface;
- a radiation source for emitting radiation at the semiconductor wafer;
- and
- a radiation-absorptive atmosphere placed within the chamber, the radiation-absorptive atmosphere including a mixture of gases, wherein the radiation-absorptive atmosphere comprises substantially 10–80 mol % Ar, substantially 10–40 mol % H2, and substantially 10–50 mol % H2O, and wherein the mixture of gases is selected to regulate the level of absorptivity of the atmosphere within the heating chamber through a combination of radiation heat transfer from the radiation source and conductive heat transfer from the radiation-absorptive atmosphere to increase a thermal effect delivered to the surface of the semiconductor wafer in relation to a thermal effect delivered to a bulk of the semiconductor wafer to affect reflow of the glass layer in the heating chamber of 750° C.
1 more element
A system comprising:
- a heating chamber and a semiconductor wafer placed in the chamber, the semiconductor wafer including a surface and a glass layer on the surface;
- a radiation source for emitting radiation of at least one wavelength in the range of 0.5 μm to 3.0 μm at the semiconductor wafer;
- and
- a radiation-absorptive atmosphere placed within the chamber, the radiation-absorptive atmosphere including a mixture of gases, wherein the radiation-absorptive atmosphere comprises substantially 10–80 mol % Ar, substantially 10–40 mol % H2, and substantially 10–50 mol % H2O, and wherein the mixture of gases is selected to regulate the level of absorptivity of the atmosphere within the heating chamber through a combination of radiation heat transfer from the radiation source and conductive heat transfer from the radiation-absorptive atmosphere to increase a thermal effect delivered to the surface of the semiconductor wafer in relation to a thermal effect delivered to a bulk of the semiconductor wafer to affect reflow of the glass layer in the heating chamber.
1 more element
Dependencies are inferred from the claim text.