Methods for fabricating a copper interconnect

Abstract

Methods for fabricating a copper interconnect are disclosed. A disclosed method comprises: employing a damascene process to form a first trench in a first insulating layer; depositing a first barrier layer and a first copper layer on the first insulating layer; forming a bottom copper interconnect by planarizing the first copper layer; depositing and planarizing a second barrier layer; depositing a second insulating layer; forming a via hole in the second insulating layer; employing a damascene process to form a second trench in the second insulating layer; and forming a via and an upper copper interconnect by depositing a third barrier layer and a second copper layer on the second insulating layer.

Dependencies are inferred from the claim text.