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US 7,247,544 B1Granted
High Q inductor integration
AssigneeNational Semiconductor Corporation
InventorsSergei Drizlikh, Todd Patrick Thibeault, Thomas Francis
Life of this patent
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Abstract
In an inductor integration process, a high Q inductor is achieved by forming an AlCu inductor via prior to depositing the inductor dielectric.
Claims12
A method of forming a via between metal layers in an integrated circuit, comprising
- forming a via post by depositing a metal layer, performing a photoresist and masking step, and etching away the metal to leave the via post, and
- thereafter depositing a main dielectric through which the via post extends.
Dependencies are inferred from the claim text.