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US 7,247,539 B2Granted
Manufacturing method of semiconductor device and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorHideyuki Kinoshita
Life of this patent
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Abstract
A manufacturing method of a semiconductor device disclosed herein, comprises: forming a first member to be patterned on a semiconductor substrate; patterning the first member to be patterned to form a plurality of parallel linear patterns and a connecting portion which connects the linear patterns on at least one end side of the linear patterns; and etching a region between the linear patterns and the connecting portion to separate the linear patterns and the connecting portion.
Claims10
A manufacturing method of a semiconductor device, comprising:
- forming a first member to be patterned on a semiconductor substrate;
- patterning the first member to be patterned to form a plurality of parallel linear patterns and a connecting portion which connects the linear patterns on at least one end side of the linear patterns;
- and
- etching a region between the linear patterns and the connecting portion to separate the linear patterns and the connecting portion.
1 more element
Dependencies are inferred from the claim text.