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US 7,247,533 B2Granted
Method of fabricating semiconductor device using selective epitaxial growth
AssigneeDongbu Electronics Co., Ltd.
InventorHeui Gyun Ahn
Life of this patent
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Abstract
A method of fabricating a semiconductor device uses selective epitaxial growth (SEG), by which leakage current generation is minimized using lateral SEG growth in case a contact intrudes a shallow track isolation feature. The method includes steps of forming a sidewall spacer on a gate, selectively growing an epitaxial layer in a lateral direction relative to the sidewall spacer and the gate, and forming a contact on the epitaxial layer.
Claims12
A method of fabricating a semiconductor device, comprising steps of:
- forming a shallow trench isolation layer;
- forming a sidewall spacer on a sidewall of a gate;
- forming at least one of a source and a drain under the sidewall;
- selectively growing an epitaxial layer in a lateral direction relative to the sidewall spacer and the gate, wherein the epitaxial layer is distinct from the shallow trench isolation layer;
- and forming a contact on the epitaxial layer,
- wherein said step of selectively growing is performed after said forming a sidewall step, and wherein no portion of the contact comes into direct contact with a boundary between the shallow trench isolation layer and the at least one of a source and a drain.
3 more elements
A method of fabricating a semiconductor device, comprising steps of:
- forming a sidewall spacer on a sidewall of a gate;
- selectively growing an epitaxial layer in a lateral direction relative to the sidewall spacer and the gate;
- and forming a contact on the epitaxial layer,
- wherein said step of selectively growing is performed after said forming a sidewall step and,
- wherein no portion of the contact comes into direct contact with a boundary between the shallow trench isolation layer and the at least one of a source and a drain.
2 more elements
Dependencies are inferred from the claim text.