Growth of textured gallium nitride thin films on polycrystalline substrates
AssigneeUniversity of Louisville
InventorsMahendra Kumar Sunkara, Hari Chandrasekaran, Hongwei Li
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Abstract
A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure.
Claims18
A process of synthesizing a textured thin film of gallium nitride on a substrate comprising the steps of:
- using a dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure;
- preparing a substrate sheet selected from the group consisting of a single crystalline substrate, a polycrystalline substrate and an amorphous substrate by:
- a) cleaning the sheet with a hydrogen fluoride (HF) solution;
- b) ultra sonicating said sheet in acetone;
- c) covering with a thin liquid gallium film;
- d) heating said gallium film on said sheet to a temperature of 800 –1,000 degrees C.;
- e) exposing said sheet to a nitrogen plasma environment, dissolving nitrogen in the liquid gallium;
- and
- f) precipitating out of the solution gallium nitride crystals whereby said gallium nitride crystals self-orient with one another to form a uniform texture.
A process of synthesizing a textured thin film of gallium nitride on polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz, comprising the steps of:
- using a dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure;
- preparing a sheet of polycrystalline substrate by:
- a) cleaning the sheet with a hydrogen fluoride (HF) solution;
- b) ultra sonicating said sheet in acetone;
- c) covering with a thin liquid gallium film;
- d) resistively heating said gallium film on said sheet to a temperature of 800 –1,000 degrees C.;
- e) exposing said sheet to an ECR-MW generated nitrogen plasma environment, dissolving nitrogen in the liquid gallium;
- and
- f) precipitating out of the solution gallium nitride crystals whereby said gallium nitride crystals self-orient with one another to form a uniform texture.
Dependencies are inferred from the claim text.