Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing
AssigneeAkrion Technologies, Inc.
InventorsGim-Syang Chen, Ismail Kashkoush, Richard Novak
Life of this patent
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Abstract
A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.
Claims9
A system for cleaning and/or photoresist stripping of photomasks comprising:
- a source of a mixture comprising sulfuric acid and ozone (SOM);
- a source of a dilute aqueous solution of ammonium hydroxide and hydrogen peroxide (dAPM);
- first means for supplying the SOM to a photomask;
- second means for supplying the dAPM to the photomask;
- means for supplying acoustical energy to the photomask;
- and
- a controller adapted to activate the SOM supply means and the acoustical energy supply means so as to supply acoustical energy to the photomask during supply of SOM to the photomask, and subsequent to completing the supply of the SOM and acoustical energy to the photomask, activate the dAPM supply means and the acoustical energy supply means so as to supply acoustical energy to the photomask during supply of dAPM to the photomask.
Dependencies are inferred from the claim text.