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US 7,163,393 B2Granted
Heat treatment jig for semiconductor silicon substrate
AssigneeSumitomo Mitsubishi Silicon Corporation
InventorNaoshi Adachi
Life of this patent
Estimating the term…
Abstract
This invention provides a heat treatment jig for semiconductor silicon substrates, which, in respective heat treatment of hydrogen annealing or argon annealing, can handle enlargement of the diameter of wafers to be treated and can also prevent slipping and dislocations that occur as a result of the stress caused by the weight of the wafer itself or the deflection of the heat treatment jig itself.
Claims8
A heat treatment jig for a semiconductor silicon substrate comprising:
- a plate-like heat treatment jig that can carry a silicon substrate comprising:
- a central projecting part, provided at the center of the jig, for supporting a central portion of a backside of the substrate;
- and
- at least one circular-arc part for supporting the backside of the substrate;
- wherein the circular-arc parts comprise:
- at least one of a plurality of circular-arc parts disposed on the same circle;
- and
- a plurality of circular-arc parts that are disposed on concentric circles of different radii.
5 more elements
A heat treatment jig for a semiconductor silicon substrate comprising:
- a plate-like heat treatment jig that can carry a silicon substrate comprising:
- a central projecting part for supporting a central portion of a backside of the substrate;
- and
- at least one circular-arc part for supporting the backside of the substrate,
- wherein capping members are disposed on at least one of the contact surfaces of the central projecting part and circular-arc parts that contact the silicon substrate.
2 more elements
A heat treatment jig for a semiconductor silicon substrate, comprising:
- a plate-like heat treatment jig that can carry a silicon substrate comprising:
- a central projecting part for supporting a central portion of a backside of the substrate;
- and
- at least one circular-arc part for supporting the backside of the substrate,
- wherein at least a single layer of a coating film is disposed on at least one of the contact surfaces of the central projecting part and circular-arc parts that contact the silicon substrate.
2 more elements
Dependencies are inferred from the claim text.