Direct application voltage variable material, components thereof and devices employing same

A composition for protecting against electrical voltage overstress comprising:

• an insulating binder, the insulating binder includes a resin defining a high dielectric breakdown strength;
• doped semiconductive particles including a core and an insulating shell, the semiconductive particles suspended within the binder;
• and
• conductive particles suspended within the binder, the conductive particles consisting essentially of a single material, and
• wherein the wherein the conductive and semiconductive particles are dispersed within the insulating binder such that the high dielectric breakdown strength prevents conductivity during a normal condition and the establishes a low resistance state in response to an electrical voltage overstress condition, and wherein the binder, the semiconductive particles and the conductive particles are configured and arranged to be laminated into an electrode gap.

A particle for use in an electrical voltage overstress composition comprising:

• a doped semiconductive core, the doped semiconductive core includes
• a core material;
• a dopant;
• and
• wherein the core material is selected from the group consisting of silicon carbide, germanium, gallium and arsenide, and the dopant is selected from the group consisting of antimony, arsenic, phosphorus and boron;
• and
• an insulating coating surrounding the core material, the insulating coating cooperating with the core material to establish a high resistance state such that the particle is electrically insulating, and a low resistance state in response to an electrical voltage overstress condition such that the particle is electrically conductive.

A particle for use in an electrical overstress composition comprising:

• an inner silicon portion, the inner silicon portion includes:
• a core material;
• a dopant, the dopant selected to change the electrical conductivity of the core material;
• and
• an outer portion that includes a material selected from the group consisting of:
• silicon dioxide, epitaxial silicon and glass, the outer portion defining and insulating coating around the inner silicon portion.