Tailored temperature uniformity
AssigneeApplied Materials, Inc.
InventorsBalasubramanian Ramachandran, Joseph Michael Ranish, Ravi Jallepally, Sundar Ramamurthy, Raman Achutharaman, Brian Haas, Aaron Hunter
Life of this patent
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Abstract
Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.
Claims18
A method of obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, comprising:
- estimating heat transfer properties of the chamber;
- estimating heat absorptive properties of a wafer;
- adjusting the physical characteristics of the chamber based on the estimated chamber and wafer properties to correct the heat transfer properties of the chamber by altering a thermal mass of an edge ring supporting the wafer wherein the thermal mass is altered by changing at least one of a thickness or density of the edge ring;
- and
- utilizing the chamber for manufacturing microprocessors.
A method for tailoring heat transfer within a chamber for microprocessor manufacturing, comprising:
- measuring heat transfer properties of the chamber;
- measuring emissivity of a substrate to be processed in the chamber;
- adjusting the physical characteristics of the chamber based on the measured heat transfer properties and emissivity by altering a thermal mass of an edge ring to correct the heat transfer properties between the chamber and the substrate wherein the thermal mass is altered by changing at least one of a thickness or density of the edge ring;
- and
- utilizing the chamber for manufacturing microprocessors.
A method for tailoring heat transfer within a chamber for microprocessor manufacturing, comprising:
- adjusting location, volume, contents, or pressure of gas flows into or out of the chamber;
- adjusting reflectivity of a reflective surface in the chamber;
- measuring heat transfer properties of a substrate disposed in the chamber based on the adjustment of the gas flows and the reflectivity;
- and
- adjusting thermal mass of an edge ring to correct heat transfer properties of the substrate wherein the thermal mass is altered by changing at least one of a thickness or density of the edge ring.
A method of obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, comprising:
- estimating heat transfer properties of the chamber by measuring the temperature of the environment in the chamber;
- estimating heat absorptive properties of a wafer by measuring the emissivity of the wafer;
- adjusting the physical characteristics of the chamber based on the measured temperature and emissivity to correct the heat transfer properties of the chamber and altering a thermal mass of an edge ring supporting the wafer wherein the edge ring comprises a ratio of edge ring thickness to substrate thickness of 1.14 to 1.30;
- and
- utilizing the chamber for manufacturing microprocessors.
Dependencies are inferred from the claim text.