Semiconductor device and MIM capacitor

An MIM capacitor, comprising:

• first and second conductor patterns embedded in a first insulation film so as to extend in said first insulation film continuously in a mutually opposing relationship;
• and
• third and fourth conductor patterns embedded in a third insulation film formed over said first insulation film via a second insulation film,
• said third and fourth conductor patterns extending in said third insulation film continuously in a mutually opposing relationship,
• wherein said second interlayer insulation film includes a fifth conductor pattern embedded therein so as to extend continuously in said second interlayer insulation film in correspondence to said first and third conductor patterns, said fifth conductor pattern connecting said first and third conductor patterns continuously,
• said second interlayer insulation film further including a sixth conductor pattern embedded therein so as to extend continuously in said second interlayer insulation film in correspondence to said second and fourth conductor patterns, said sixth conductor pattern connecting said second and fourth conductor patterns continuously.