US 7,126,204 B2 · Integrated semiconductor circuit with an electrically programmable switching element

Abstract

The invention relates to a semiconductor circuit (20) having an electrically programmable switching element (10), an “antifuse”, which includes a substrate electrode (2), produced in a substrate (1) which can be electrically biased with a substrate potential (Vo), and an opposing electrode (5) which is isolated from the substrate electrode (2) by an insulating layer (8), where the substrate electrode (2) includes at least one highly doped substrate region (3), and where the opposing electrode (5) can be connected to an external first electrical potential (V+) which can be provided outside of the semiconductor circuit (20). In line with the invention, the substrate electrode (2) can be connected to a second electrical potential (V−), which is provided inside the circuit and which, together with the external first potential (V+), produces a higher programming voltage (V) than the external first potential (V−) together with the substrate potential (Vo). In addition, the substrate electrode (2) is shielded from the substrate potential (Vo) by a current barrier layer (7). This allows the second potential to be lowered below the substrate potential or to be raised above it; the resulting increased programming voltage does not endanger other circuit regions.

Claims20

Dependent claims

An integrated semiconductor circuit having an electrically programmable switching element, which can be switched once from an electrically insulating state into an electrically conductive state by applying a programming voltage,

where the switching element has a substrate electrode, produced in a substrate, which can be electrically biased with a substrate potential, and an opposing electrode, which is isolated from the substrate electrode by an insulating layer,
where the substrate electrode comprises at least one highly doped substrate region, and
where the opposing electrode can be connected to an external first electrical potential, which can be provided outside of the semiconductor circuit,
wherein
the substrate electrode can be connected, for the purpose of programming the switching element, to a second electrical potential, which is provided by the semiconductor circuit, and which, together with the external first potential, provides a higher programming voltage than the external first potential together with the substrate potential, wherein said insulating layer is damaged by said higher programming voltage such that an electrical connection exists between said substrate electrode and said opposing electrode after said programming, and wherein the substrate electrode is shielded from the substrate potential by a current barrier layer, which when the switching element is programmed, prevents a flow of current between the substrate electrode and a region of the substrate, which has been biased with the substrate potential.

2 more elements

A circuit having an electrically programmable element for switching from an electrically insulating state to an electrically conductive state comprising:

a semiconductor substrate having a first doping, said substrate connected to a substrate potential;
a well defined in said substrate, said well having a second doping;
a current barrier layer, having a third doping, formed between said substrate and said well;
a substrate electrode defined in said well;
a first terminal connected to said well and said substrate electrode;
a well potential or voltage for selectively connecting to said first terminal, said well potential less than said substrate potential;
an opposing electrode connected to a second terminal;
a programming potential for connecting to said second terminal, said programming potential greater than said substrate potential;
and
an insulating layer between said substrate electrode and said opposing electrode, said insulating layer made of a material that is damaged when said well voltage is connected to said first terminal at the same time said programming voltage is connected to said second terminal such that said damaged insulating layer provides an electrical connection between said substrate electrode and said opposing electrode.

7 more elements

Dependencies are inferred from the claim text.

Integrated semiconductor circuit with an electrically programmable switching element

Life of this patent

Integrated semiconductor circuit with an electrically programmable switching element

Life of this patent

Abstract

Claims20