Integration of multiple gate dielectrics by surface protection

A multi gate oxide structure, comprising:

• a semiconductor substrate having first and second regions and having a first major surface, wherein said first region of the substrate is vertically disposed by a distance d1 from said first major surface, and wherein said second region of the substrate is vertically disposed by a distance d2 from said first major surface, wherein d2>d1;
• a first gate oxide layer having a first average thickness disposed within said first region;
• and
• a second gate oxide layer having a second average thickness disposed within said second region.

A method for forming a multi gate oxide structure, comprising:

• providing a substrate having an initial oxide layer thereon, said substrate having a first major surface;
• selectively exposing a first region of the substrate;
• forming a first gate oxide layer within the first region;
• selectively exposing a second region of the substrate;
• and
• forming a second gate oxide layer within the second region;
• wherein the first region of the substrate is vertically disposed by a distance d1 from the first major surface, and wherein the second region of the substrate is vertically disposed by a distance d2 from the first major surface.