Monolithically integrated resistive structure with power IGBT (insulated gate bipolar transistor) devices

An integrated device having a resistive structure and an IGBT transistor, comprising:

• a semiconductor substrate of a first type of conductivity;
• a first semiconductor layer of a second type of conductivity on said semiconductor substrate;
• and
• a plurality of regions of the first type of conductivity in said first semiconductor layer, said regions comprise a first region of substantially annular shape and a second region, wherein the first region and a portion of the first semiconductor layer surrounded by the first region form the resistive structure, and wherein the second region forms a body region of the IGBT transistor.

An integrated device, comprising:

• a semiconductor substrate of a first conductivity type, the substrate being a first conductive region of an insulated gate bipolar transistor;
• a first semiconductor layer of a second conductivity type on said semiconductor substrate, the first semiconductor layer being a driving terminal of the transistor;
• and
• a surrounding region of the first conductivity type in said first semiconductor layer, said region completely laterally surrounding a portion of the first semiconductor layer, the surrounding region and the surrounded portion of the first semiconductor layer being a resistive structure.