Oxidation method for semiconductor process
AssigneeTokyo Electron Limited
InventorsKeisuke Suzuki, Toshiyuki Ikeuchi, Kazuhide Hasebe
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Abstract
An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the process container. The oxidation method also includes causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure to generate water vapor, and oxidizing the surface of the target substrate by the water vapor. The process pressure is set at 2000 Pa (15 Torr) or more.
Claims11
A method for oxidizing a surface of a plurality of target substrates together, the substrates being stacked at intervals in a vertical direction, the method comprising:
- heating a process container that accommodates the target substrate;
- supplying hydrogen gas and oxygen gas into the process container while exhausting the process container;
- causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure of a water vapor oxidation mode to generate water vapor, the process pressure being set to be within a range of from 2666 Pa (20 Torr) to 10130 Pa (76 Torr);
- and
- oxidizing the surface of the target substrate by the water vapor in the water vapor oxidation mode;
- wherein the surface of the target substrate comprises a semiconductor surface.
A method for oxidizing a silicon layer on a surface of a plurality of target substrates together to form a silicon oxide film, the substrates being stacked at intervals in a vertical direction, the method comprising:
- heating a process container that accommodates the target substrate;
- supplying hydrogen gas and oxygen gas into the process container from an upper side while exhausting the process container from a lower side;
- causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure of a water vapor oxidation mode to generate water vapor, the process temperature being set to be within a range of from 600 to 1000° C., and the process pressure being set to be within a range of from 2666 Pa (20 Toni) to 10130 Pa (76 Torr);
- and
- oxidizing the silicon layer by the water vapor to form the silicon oxide film in the water vapor oxidation mode.
Dependencies are inferred from the claim text.