Etching method
AssigneeTokyo Electron Limited
InventorsAkitoshi Harada, Koichiro Inazawa
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Abstract
An etching method comprises a step of forming a via hole structure based on a photoresist film layer (210) for forming a wiring pattern, a silicon oxide film layer (201) which is a hard mask layer formed under the photoresist film, and an organic Low-k film layer (203) formed under the hard mask layer, wherein in the step, the organic film layer and the organic Low-k film layer are etched by using a mixture gas of N2 gas, H2 gas, and a CF gas.
Claims12
An etching method for forming a recess in a semiconductor structure including an organic film layer that includes at least one photo resist layer for use in fabricating a wiring pattern, a hard mask layer including a silicon nitride film layer and formed underneath the organic film layer, and an organic Low-k film layer formed below the hard mask layer, the method comprising the step of:
- etching the organic film layer and the organic Low-k film layer by employing an etching gas including a gaseous mixture of a N2 gas, a H2 gas and a CF-based gas to remove the photo resist layer without leaving residues thereof on the hard mask layer and the silicon nitride film layer being exposed after etching.
An etching method for forming a recess in a semiconductor structure including an organic film layer that includes at least one photo resist layer for use in fabricating a wiring pattern, a hard mask layer including a silicon nitride film layer and formed underneath the organic film layer, and an organic Low-k film layer formed below the hard mask layer, the method comprising the step of:
- etching the photo resist layer and the organic Low-k film layer by employing a gaseous mixture of a gas including N and H, a CF-based gas and an O2 gas as an etching gas to remove the photo resist layer without leaving residues thereof on the hard mask layer and the silicon nitride film layer being exposed after etching.
Dependencies are inferred from the claim text.