Plasma etch process for multilayer vias having an organic layer with vertical sidewalls
AssigneeMotorola, Inc.
InventorsDonald F. Weston, William J. Dauksher, Ngoc V. Le
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Abstract
A process is provided for fabricating a via 52 between bonded wafers without undercutting an organic bonding material 32. The process for forming the via 52 in a structure including a dielectric material 14 and an organic bonding material 32, comprises forming a resist material 42 on the dielectric layer 14 and etching through the dielectric layer 14 and the organic bonding material 32 with 60CF4/20Ar/60CHF3/20N2. The resist may then be removed with an anisotropic high density oxygen plasma.
Claims20
A process for forming a via in a structure, the structure including a dielectric and an organic bonding material, comprising:
- forming a resist material on the dielectric layer;
- etching through the dielectric layer;
- and
- etching through the organic bonding material with an etchant consisting of CF4, Ar, CHF3, and N2.
A process for forming a via in a structure, the structure including a dielectric layer bonded to a silicon nitride layer with an organic bonding material, comprising the steps of:
- forming a resist material on the dielectric layer;
- etching through the dielectric layer;
- and
- etching through the organic bonding material and the silicon nitride layer with an etchant consisting of CF4, Ar, CHF3, and N2.
A process for forming a via in a structure, the structure including a first dielectric layer bonded to a silicon nitride layer overlying a second dielectric layer with an organic bonding material, the dielectric layer and the silicon layer containing first and second metal contacts, respectfully, comprising the steps of:
- forming a resist material on the first dielectric layer;
- etching through the first dielectric layer;
- etching through the organic bonding material and the silicon nitride layer with an etchant consisting of CF4, Ar, CHF3, and N2;
- and
- forming a conductive material within the via, the conductive material contacting the first and second metal contacts.
A process comprising:
- bonding a donor wafer to a host wafer with an organic material, the donor wafer comprising a first dielectric layer and a first metal contact, the host wafer comprising a second dielectric layer overlying a substrate with a second metal contact contained within the dielectric material and a silicon nitride layer overlying the second dielectric layer and second metal layer;
- forming a resist material on the first dielectric layer;
- etching through the first dielectric layer;
- etching through the organic bonding material and the second dielectric layer with an etchant consisting of CF4, Ar, CHF3, and N2;
- and
- forming a conductive material within the via that contacts the first and second metal contacts.
Dependencies are inferred from the claim text.