Fabrication method for microstructures with high aspect ratios
AssigneeIndustrial Technology Research Institute
InventorsNai-Hao Kuo, Kai-Hsiang Yen, Jing-Hung Chiou, Po-Hao Tsai, Yuh-Wen Lee
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Abstract
A fabrication method for microstructures with high aspect ratios uses a CMOS process to form a desired microstructure on a silicon substrate. The steps of forming a contact plug and a via plug of the process are used to form etching channels in insulation layers, polysilicon layers and metal layers, penetrating to the silicon substrate. An etching process is then performed through the etching channel to form the desired microstructure with high aspect ratio.
Claims9
A fabrication method for microstructures with a high aspect ratio, the method comprising the steps of:
- (a) providing a silicon substrate;
- (b) depositing a first insulation layer on a surface of the silicon substrate, and forming a first polysilicon layer with predetermined pattern on the first insulation layer;
- (c) depositing a second insulation layer on a surface of the first polysilicon layer, and planarizing the second insulation layer;
- (d) selectively etching the second insulation layer in a first predetermined pattern on the first polysilicon layer to form a contact plug that penetrates to the first polysilicon layer, and simultaneously etching the second insulation layer in a predetermined pattern on the first insulation layer to form a etching channel that penetrates to the silicon substrate;
- (e) depositing a first metal layer on the second insulation layer;
- (f) defining the geometry size of the first metal layer, and removing the first metal layer that corresponds the etching channel by etching;
- (g) depositing a passivation layer on the first metal layer to form a microstructure and a circuit layout;
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- (h) etching the silicon substrate through the etching channel to suspend the microstructure, forming a microstructure with high aspect ratio.
Dependencies are inferred from the claim text.