Inclusion of low-k dielectric material between bit lines

A method of incorporating a first dielectric material having a first dielectric constant into an insulator structure that is adjacent to at least one conductive line of a semiconductor device, said insulator structure and said at least one conductive line being fabricated by a process that includes at least one thermal processing step at a temperature greater than a maximum withstand temperature of said first dielectric material, said method comprising:

• fabricating said insulator structure and said at least one conductive line at least through the thermal processing step using a second dielectric material having a second dielectric constant greater than said first dielectric constant and a maximum withstand temperature greater than the temperature of the thermal processing step, said fabricating step comprising:
• depositing a first layer of said second dielectric material atop a surface of a semiconductor substrate,
• planarizing said first layer of said second dielectric material to a top surface of another conductive line disposed atop said semiconductor substrate,
• depositing another layer of said second dielectric material atop said first layer of said second dielectric material and atop said another conductive line,
• patterning and etching said another layer of said second dielectric material to form at least one opening therein, and
• filling said opening with at least one conducting material to form said at least one conductive line;
• removing at least a portion of said second dielectric material subsequent to said thermal processing step;
• and then
• depositing a layer of said first dielectric material in place of the removed portion of said second dielectric material.

A method of incorporating first dielectric material having a first dielectric constant into an insulator structure that is adjacent to at least one conductive line of a semiconductor device, said insulator structure and said at least one conductive line being fabricated by a process that includes at least one thermal processing step at a temperature greater than a maximum withstand temperature of said first dielectric material, said method comprising:

• fabricating said insulator structure and said at least one conductive line at least through the thermal processing step using a second dielectric material having a second dielectric constant greater than said first dielectric constant, and a maximum withstand temperature greater than the temperature of the thermal processing step, said second dielectric material formed atop an etch stop layer,
• removing at least a portion of said second dielectric material down to said etch stop layer subsequent to said thermal processing step;
• and then
• depositing a layer of said first dielectric material in place of the removed portion of said second dielectric material.

A method of incorporating first dielectric material having a first dielectric constant into an insulator structure that is adjacent at least one conductive line of a semiconductor device, said insulator structure and said at least one conductive line being fabricated by a process that includes at least one thermal processing step at a temperature greater than a maximum withstand temperature of said first dielectric material, said method comprising:

• fabricating said insulator structure and said at least one conductive line at least through the thermal processing step using a second dielectric material having a second dielectric constant greater than said first dielectric constant, and a maximum withstand temperature greater than the temperature of the thermal processing step, said fabricating step comprising depositing a contact barrier layer prior to forming said at least one conductive line, and annealing said contact barrier layer at a temperature greater than said maximum withstand temperature of said first dielectric material;
• removing at least a portion of said second dielectric material subsequent to said thermal processing step;
• and then
• depositing a layer of said first dielectric material in place of the removed portion of said dielectric material.

A method of incorporating first dielectric material having a first dielectric constant into an insulator structure that is adjacent to at least one conductive line of a semiconductor device, said insulator structure and said at least one conductive line being fabricated by a process that includes at least one thermal processing step at a temperature greater than a maximum withstand temperature of said first dielectric material, said method comprising:

• fabricating said insulator structure and said at least one conductive line at least through the thermal processing step using a second dielectric material having a second dielectric constant greater than said first dielectric constant and a maximum withstand temperature greater than the temperature of the thermal processing step;
• removing at least a portion of said second dielectric material subsequent to said thermal processing step;
• and then
• depositing a layer of said first dielectric material in place of the removed portion of said second dielectric material;
• planarizing said layer of said first dielectric material to a top surface of said conductive line;
• and
• depositing another layer of said first dielectric material atop said layer of said first dielectric material and atop said conductive line.

A method of incorporating a first dielectric material having a first dielectric constant into a semiconductor device, said semiconductor device being fabricated by a process that includes at least one thermal processing step at a temperature greater than a maximum withstand temperature of said first dielectric material, said method comprising:

• fabricating said semiconductor device at least through the thermal processing step using a second dielectric material having a second dielectric constant greater than said first dielectric constant, and a maximum withstand temperature greater than the temperature of the thermal processing step, said second dielectric material formed atop an etch stop layer;
• removing at least a portion of second dielectric material down to said etch stop layer subsequent to said thermal processing step;
• and then
• depositing a layer of said first dielectric material in place of the removed portion of said second dielectric material.

A method of incorporating a first dielectric material having a first dielectric constant into a layer of an electronic structure that includes at least one conductive line of a semiconductor device, said layer of electronic structure and said at least one conductive line being fabricated by a process that includes at least one thermal processing step at a temperature greater than a maximum withstand temperature of said first dielectric material, said method comprising:

• fabricating said layer of electronic structure and said at least one conductive line at least through the thermal processing step, said layer comprising having a second dielectric constant greater than said first dielectric constant, and a second dielectric material lying adjacent said at least one conductive line and said second dielectric material having a maximum withstand temperature greater than the temperature of the thermal processing step;
• removing at least a portion of said second dielectric material from said layer subsequent to said thermal processing step;
• and then
• depositing a layer of said first dielectric material in place of the removed portion of said second dielectric material.