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US 7,125,768 B2Granted
Method for reducing single bit data loss in a memory circuit
AssigneeMicron Technology, Inc.
InventorAlan R. Reinberg
Life of this patent
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Abstract
The present invention includes a method for reducing random bit data loss in a memory circuit. The method comprises a semiconductor layer that has a surface. The semiconductor layer is exposed at an elevated temperature to an atmosphere comprising deuterium thereby forming a film on the semiconductor layer comprising deuterium. A memory circuit is fabricated on or within the semiconductor layer.
Claims13
A method for reducing random single bit data loss in a FLASH memory circuit having a programming operation and an erase operation, comprising:
- providing a semiconductor layer having a surface;
- heating the layer in an atmosphere comprising a Hydrogen isotope wherein the Hydrogen isotope is incorporated into the layer;
- and
- fabricating a memory circuit having a programming operation and an erase operation, comprising single bit data using the semiconductor layer, the fabricating comprising fabricating a gate region in the layer;
- treating a portion of the surface to form a thin layer of insulator film adjacent to the gate region and under the gate region;
- and heating the thin layer in an atmosphere comprising Hydrogen isotope, wherein single bit data loss is reduced and wherein random single bit data loss is prevented in both the programming operation and the erase operation.
3 more elements
Dependencies are inferred from the claim text.