Rework process of patterned photo-resist layer
AssigneeMacronix International Co., Ltd.
InventorsYu-Lin Yen, Ching-Yu Chang
Life of this patent
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Abstract
A rework process of patterned photo-resist layer is provided. First, a substrate is provided with a first DARC, a first primer and a first patterned photo-resist layer being sequentially formed thereon. Next, remove the first patterned photo-resist layer and the first primer from the first DARC. After that, form a second DARC on the first DARC; form a second primer on the second DARC. Last, form a second patterned photo-resist layer on the second primer.
Claims16
A rework process of patterned photo-resist layer, comprising at least:
- providing a substrate with a first dielectric anti-reflective coating (DARC), a first primer and a first patterned photo-resist layer being sequentially formed thereon;
- removing the first patterned photo-resist layer and the first primer from the first DARC;
- forming a second DARC on the first DARC;
- forming a second primer on the second DARC;
- and
- forming a second patterned photo-resist layer on the second primer,
- wherein the first DARC comprises:
- a SiON layer;
- and
- a SiO2 layer formed on the SiON layer.
A reworked semi-conductor rework process of patterned photo-resist layer, comprising at least:
- providing a substrate with a first SiON layer, a first SiO2 layer, a first primer and a first patterned photo-resist layer being sequentially formed thereon;
- removing the first patterned photo-resist layer and the first primer from the first SiO2 layer,
- forming a second SiO2 layer or a second SiON layer on the first SiO2 layer;
- forming a second primer on the second SiO2 layer or the second SiON layer;
- and
- forming a second patterned photo-resist layer on the second primer.
Dependencies are inferred from the claim text.