Low-temperature silicon nitride deposition
AssigneeIntel Corporation
InventorsMichael L. McSwiney, Michael D. Goodner
Life of this patent
Estimating the term…
Abstract
A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.
Claims6
A method comprising:
- combining a specific silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.;
- and
- forming a silicon nitride film, wherein the silicon source precursor has one of the general formula:
- where R1 is a saturated or unsaturated hydrocarbon chain comprising one or more carbon atoms,
- where each of R2 and R3 is selected from a hydrogen, a halogen, and a saturated or unsaturated hydrocarbon moiety;
- where each of R4 and R5 is selected from a saturated or unsaturated hydrocarbon;
- and
- the general formula:
- Si(NRCxHyNR)aH4-2n ,
- where R is selected from a H and a saturated or unsaturated hydrocarbon moiety,
- where x is an integer greater than or equal to one,
- where y is an integer greater than or equal to two, and
- where a is one or two.
A method comprising:
- combining a silicon source precursor and a nitrogen source precursor;
- and
- forming a silicon nitride film,
- wherein the silicon source precursor is selected from one of the general formula:
- where R1 is a saturated or unsaturated hydrocarbon chain comprising one or more carbon atoms,
- where each of R2 and R3 is selected from a hydrogen, a halogen, and a saturated or unsaturated hydrocarbon moiety, and
- where each of R4 and R5 is selected from a saturated or unsaturated hydrocarbon, and
- the general formula:
- Si(NRCxHyNR)aH4-2n,
- where R is selected from a H and a saturated or unsaturated hydrocarbon moiety,
- where x is an integer greater than one or equal to one,
- where y is an integer greater than or equal to two, and
- where a is one or two.
A method comprising:
- combining a aminosilane source precursor and a nitrogen source precursor in a deposition chamber, wherein the aminosilane source precursor comprises a material having a property that will, in combination with the nitrogen source precursor, form a silicon nitride film at a temperature up to 550° C;
- and
- forming a silicon nitride film, wherein the aminosilane is selected from one of the general formula:
- where R1 is a saturated or unsaturated hydrocarbon chain comprising one or more carbon atoms,
- where each of R2 and R3 is selected from a H, a halogen, and a saturated or unsaturated hydrocarbon moiety, and
- where each of R4 and R5 is selected from a saturated or unsaturated hydrocarbon, and
- the general formula:
- Si(NRCxHyNR)aH4-2a,
- where R is selected from a H and a saturated or unsaturated hydrocarbon moiety,
- where x is an integer greater than or equal to one,
- where y is an integer greater than or equal to two, and
- where a is one or two.
Dependencies are inferred from the claim text.