Polysilicon resistor semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsKatsumichi Ueyanagi, Mutsuo Nishikawa, Katsuyuki Uematsu
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Abstract
A semiconductor device includes a polysilicon resistor that can suppress variations in resistance value in environments with an ambient temperature higher than room temperature. The resistance value Rcon of a polysilicon contact is reduced to 2% or less of the sum of the resistance value Rcon of the polysilicon contact and the resistance value Rpoly of a polysilicon resistor. Hence, a semiconductor device that is not significantly affected by a variation in the resistance of the polysilicon contact is realized. This device suppresses variations in resistance value in environments with an ambient temperature higher than room temperature.
Claims12
A semiconductor device comprising:
- a semiconductor substrate;
- a polysilicon resistor having two ends and formed on the semiconductor substrate via an insulating film;
- and
- two conductors each having multiple contacts and electrically connected to the polysilicon resistor close to a respective end thereof via the respective multiple contacts,
- wherein the resistance value Rpoly of the polysilicon resistor and the total resistance value Rcon of the multiple contacts of the two conductors have the following relations:
- Rcon/(Rpoly+Rcon)≦2%.
Dependencies are inferred from the claim text.