Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsHideaki Ninomiya, Tomoki Inoue
Life of this patent
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Abstract
A semiconductor device disclosed herein comprises: a first base region which is of a first conductivity type; a second base region which is of a second conductivity type and which is selectively formed on a major surface of the first base region; a stopper region which is of a first conductivity type and which is formed on the major surface of the first base region, the stopper region being a predetermined distance away from the second base region and surrounding the second base region; and a ring region which is of a second conductivity type which is formed on the major surface of the first base region between the second base region and the stopper region, the ring region being spirally around the second base region and electrically connected to the second base region and the stopper region.
Claims10
A semiconductor device comprising:
- a first base region which is of a first conductivity type;
- a second base region which is of a second conductivity type and which is selectively formed on a major surface of the first base region;
- a stopper region which is of a first conductivity type and which is formed on the major surface of the first base region, the stopper region being a predetermined distance away from the second base region and surrounding the second base region;
- and
- a ring region which is of a second conductivity type which is formed on the major surface of the first base region between the second base region and the stopper region, the ring region being spirally around the second base region and electrically connected to the second base region and the stopper region;
- wherein corner auxiliary members are formed in corner portions of the ring region, the corner auxiliary members being electrically connected to the ring region and having a resistance lower than the ring region, lengths of straight portions which are portions of the ring region excluding the corner portions are equal irrespective of whether the straight portions are on an inner circumferential side or on an outer circumferential side.
A semiconductor device comprising:
- a first base region which is of a first conductivity type;
- a second base region which is of a second conductivity type and which is selectively formed on a major surface of the first base region;
- a stopper region which is of a first conductivity type and which is formed on the major surface of the first base region, the stopper region being a predetermined distance away from the second base region and surrounding the second base region;
- a ring region which is of a second conductivity type which is formed on the major surface of the first base region between the second base region and the stopper region, the ring region being spirally around the second base region and electrically connected to the second base region and the stopper region;
- wherein corner auxiliary members are formed in corner portions of the ring region, the corner auxiliary members being electrically connected to the ring region and having a resistance lower than the ring region, lengths of straight portions which are portions of the ring region excluding the corner portions are equal irrespective of whether the straight portions are on an inner circumferential side or on an outer circumferential side, and
- wherein VBD/Rring which is a leak current Ileak is designed to be eciual to 1 mA/cm2 or less, where VBD is a withstand voltage of the semiconductor device and Rring is a resistance of the entire ring region.
Dependencies are inferred from the claim text.