Flip-chip light emitting diode

A flip chip light emitting diode die including:

• a light-transmissive substrate;
• a plurality of semiconductor layers disposed on the light-transmissive substrate, the semiconductor layers including a p-type layer and an n-type layer, the semiconductor layers defining a device mesa;
• and
• a reflective electrode disposed on the device mesa to energize the device mesa to produce light and to reflect the light produced by the device mesa toward at least one of the light-transmissive substrate and sides of the device mesa, the reflective electrode including a topmost one or more of the plurality of semiconductor layers, the topmost one or more of the plurality of semiconductor layers including first insulating portions having a first refractive index, and the topmost one or more of the plurality of semiconductor layers further including second semiconducting portions laterally interspersed amongst the first insulating portions and having a second refractive index different from the first refractive index, the first insulating portions and the second semiconducting portions cooperatively defining the topmost one or more of the plurality of semiconductor layers, the reflective electrode having laterally periodic reflectivity modulations.

A flip chip light emitting diode die including:

• a light-transmissive substrate;
• a plurality of semiconductor layers disposed on the light-transmissive substrate, the semiconductor layers including a p-type layer and an n-type layer, the semiconductor layers defining a device mesa;
• and
• a reflective electrode disposed on the device mesa to energize the device mesa to produce light and to reflect the light produced by the device mesa, the reflective electrode including electrical connecting material disposed over portions of the device mesa and making electrical contact with the device mesa, an insulating grid having openings at which the electrical connecting material is disposed, and a reflective layer disposed over the insulating grid and the electrical connecting material and electrically interconnecting the electrical connecting material at the openings, a roughened interface being disposed between the reflective layer and the insulating grid to scatter the reflected light toward the sides of the device mesa.

A flip chip light emitting diode die including:

• a light-transmissive substrate;
• a plurality of semiconductor layers disposed on the light-transmissive substrate, the semiconductor layers including a p-type layer and an n-type layer, the semiconductor layers defining a device mesa;
• and
• a reflective electrode disposed on the device mesa to energize the device mesa to produce light and to reflect the light produced by the device mesa toward at least one of the light-transmissive substrate and sides of the device mesa, the reflective electrode including electrical connecting material portions disposed over the device mesa and making electrical contact with the device mesa and light-transmissive dielectric portions disposed over the device mesa and laterally interspersed with the electrical connecting material portions.