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US 7,119,020 B2Granted
Method for fabricating semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHideaki Okamura, Takao Yamaguchi, Tomoyuki Sasaki
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Abstract
A silicon oxide film is formed on a semiconductor substrate made of silicon. Subsequently, a resist film containing carbon is formed on the silicon oxide film, and thereafter the formed resist film is patterned, thereby forming a resist pattern. Subsequently, the resist pattern is exposed to a sulfur dioxide gas, and then dry etching is performed on the silicon oxide film by using the resist pattern exposed to the sulfur dioxide gas as a mask.
Claims7
A method for fabricating a semiconductor device, comprising the steps of:
- forming a thin film made of an inorganic material;
- forming a resist film containing carbon on the thin film and thereafter patterning the formed resist film to form a resist pattern from the resist film;
- exposing the resist pattern to a gas containing sulfur to improve a strength of sidewalls of the resist pattern;
- and
- performing dry etching of the thin film using as a mask the resist pattern whose strength has been improved because of the gas containing sulfur.
2 more elements
Dependencies are inferred from the claim text.