Method of forming a conductive structure

A method of forming a conductive structure in a semiconductor material of a wafer, the semiconductor material having a top surface, the method comprising:

• forming a number of spaced-apart trenches in the semiconductor material, the trenches including a plurality of first trenches, a plurality of second trenches, a first center trench formed between the first and second trenches, a plurality of third trenches, a plurality of fourth trenches, and a second center trench formed between the third and fourth trenches, the first center trench crossing the second center trench, each trench having a plurality of sidewalls and a bottom surface, a depth of a first trench being different from a depth of an adjacent first trench, a depth of a second trench being different from a depth of an adjacent second trench, a depth of a third trench being different from a depth of an adjacent third trench, a depth of a fourth trench being different from a depth of an adjacent fourth trench;
• implanting dopant atoms into the bottom surface of each trench;
• forming an isolation material on the sidewalls and bottom surface of a trench;
• forming a plurality of conductive regions in the semiconductor material, the plurality of conductive regions including:
• a first conductive region adjacent to the bottom surface of the shallowest first trench of the plurality of first trenches;
• a second conductive region adjacent to the bottom surface of the shallowest second trench of the plurality of second trenches;
• a third conductive region adjacent to the bottom surface of the shallowest third trench of the plurality of third trenches;
• and
• a fourth conductive region adjacent to the bottom surface of the shallowest fourth trench of the plurality of fourth trenches.

A method of forming a conductive structure in a semiconductor material, the semiconductor material having a top surface, the method comprising:

• forming three or more spaced-apart trenches in the semiconductor material, the three or more trenches including a first trench that has a first depth, a second trench that has a second depth, and a third trench that has a third depth, the second trench lying between the first and third trenches, no trenches lying between the first and second trenches, no trenches lying between the second and third trenches, the second depth being greater than the first depth, the third depth being greater than the second depth, each trench having a bottom surface;
• introducing dopant atoms into the semiconductor material through the bottom surface of each trench;
• and
• diffusing the dopant atoms to form a continuous diffused region that contacts the bottom surface of each trench.