Integrated circuit capacitor having antireflective dielectric
AssigneeTexas Instruments Incorporated
InventorsBill Alan Wofford, Blake Ryan Pasker, Xinfen Chen, Binghua Hu
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Abstract
A capacitor (100) is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor (100) has conductive top and bottom electrodes (140, 144) and a nonconductive capacitor dielectric (142). In one example, the dielectric (142) includes first and second thin dielectric layers (112, 114) that sandwich a layer of antireflective material (118). The thin layers (112, 114) provide the dielectric behavior necessary for the capacitor while the antireflective layer (118) promotes reduced feature sizes by mitigating reflected standing waves, among other things.
Claims14
A method of forming a capacitor as part of an integrated circuit (IC) fabrication process, comprising:
- providing a semiconductor substrate having a first layer of metallization formed thereon;
- forming a layer of antireflective dielectric material over the first layer of metallization, wherein the layer of antireflective dielectric material comprises a layer of antireflective material sandwiched between a first layer of dielectric material and a second layer of dielectric material;
- forming a second layer of metallization over the layer of antireflective dielectric material;
- and
- patterning the second layer of metallization, the layer of antireflective dielectric material and the first layer of metallization to establish the capacitor which has a top conductive electrode formed from the second layer of metallization, a nonconductive capacitor dielectric formed from the layer of antireflective dielectric material and a bottom conductive electrode formed from the first layer of metallization.
A method of forming a capacitor as part of an integrated circuit (IC) fabrication process, comprising:
- providing a semiconductor substrate having a first layer of metallization formed thereon;
- forming a layer of antireflective dielectric material over the first layer of metallization;
- forming a second layer of metallization over the layer of antireflective dielectric material;
- patterning the second layer of metallization, the layer of antireflective dielectric material and the first layer of metallization to establish the capacitor which has a top conductive electrode formed from the second layer of metallization, a nonconductive capacitor dielectric formed from the layer of antireflective dielectric material and a bottom conductive electrode formed from the first layer of metallization;
- forming a layer of hardmask material over the second layer of metallization;
- forming a first layer of resist material over the layer of hardmask material;
- patterning the first layer of resist material;
- and
- patterning the layer of hardmask material and the second layer of metallization with the patterned first layer of resist material serving as a mask.
Dependencies are inferred from the claim text.