Method of manufacturing a metal-insulator-metal capacitor using an etchback process

A method of manufacturing an integrated circuit, comprising:

• forming transistor devices over a substrate in a transistor device region;
• forming a metal-insulator-metal (MIM) capacitor over the substrate in a capacitor region, wherein the capacitor region is located proximate the transistor device region, including;
• providing a material layer over the substrate in the capacitor region;
• forming a refractory metal layer having a thickness over the substrate, at least a portion of the refractory metal layer extending over the material layer;
• reducing the thickness of the portion of the refractory metal layer extending over the material layer, thereby forming a thinned refractory metal layer;
• and
• reacting the thinned refractory metal layer with at least a portion of the material layer to form an electrode for use in the capacitor;
• and
• forming dielectric layers over the transistor devices and capacitor, the dielectric layers having interconnects therein for contacting the transistor devices and the capacitor and thereby forming an operational integrated circuit.

An integrated circuit, comprising:

• transistor devices located over a substrate, each of the transistor devices having silicided regions having a first thickness;
• a metal-insulator-metal (MIM) capacitor located over the substrate and proximate the transistor devices, a bottom electrode of the capacitor having a silicided region having a second different thickness;
• and
• dielectric layers located over the transistor devices and capacitor, the dielectric layers having interconnects therein for contacting the transistor devices and the capacitor and thereby forming an operational integrated circuit.