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AssigneeCanon Kabushiki Kaisha
InventorsShoji Nishida, Takehito Yoshino, Masaaki Iwane, Masaki Mizutani
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With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.
A liquid phase growth method for a silicon crystal, in which a silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, comprising the step of:
A manufacturing method for a solar cell including at least a step of forming a silicon layer by liquid phase growth, comprising the step of:
Dependencies are inferred from the claim text.