Method for polishing silicon carbide crystal substrate
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsNaoyuki Ikenaka, Hideji Fukuda
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Abstract
A method for polishing a silicon carbide crystal substrate according to the present invention includes a polishing process of polishing a silicon carbide crystal substrate having a surface roughness Rz of at most 50 μm, using an abrasive solution containing abrasive particles made of boron carbide. Accordingly, it is possible, by using boron carbide as abrasive particles instead of conventionally used diamond, to reduce the damage caused to silicon carbide crystals, which constitute the material to be polished, and to the surface of the polishing surface plate, and to perform surface polishing precisely.
Claims18
A method for polishing a silicon carbide crystal substrate, the method comprising:
- a polishing process of polishing a silicon carbide crystal substrate having a surface roughness before polishing Rz of at most 50 μm, using an abrasive solution containing abrasive particles made of boron carbide,
- wherein the polishing process, an average particle size of the abrasive particles that are used in an initial step is larger than an average particle size of the abrasive particles that are used in a final step and wherein the average particle size of the abrasive particles that is used in the initial step is at least 60 um and at most 100 um, and the average particle size of the abrasive particles that is used in the final step is at most 10 um.
A method for polishing a silicon carbide crystal substrate, the method comprising:
- a polishing process of polishing a silicon carbide crystal substrate having a surface roughness before polishing Rz of at most 50 μm, using an abrasive solution containing abrasive particles made of boron carbide,
- wherein, in the polishing process, polishing is performed while applying a surface pressure of at least 100 gf/cm2 and at most 200 gf/cm2 to silicon carbide crystal substrate.
Dependencies are inferred from the claim text.