Method for creating barriers for copper diffusion

A semiconductor device comprising:

• a dielectric layer;
• an electrically conductive copper containing layer;
• and
• a barrier layer, separating the dielectric layer from the copper containing layer, comprising a silicon oxide layer doped with divalent ion dopant, where at least about 98% of the dopant is within the silicon oxide in a region that extends from a surface of the barrier layer adjacent to the copper containing layer to a depth of less than about 340 Å.

A semiconductor device comprising:

• a dielectric layer;
• an electrically conductive copper containing layer;
• and
• a barrier layer, separating the dielectric layer from the copper containing layer, comprising a silicon oxide layer doped with divalent ion dopant, wherein at least about 98% of the dopant is within the silicon oxide in a region that extends from a surface of the barrier layer adjacent to the copper containing layer to a depth of less than about 170 Å.