Low triggering voltage ESD protection structure and method for reducing the triggering voltage
AssigneeNational Semiconductor Corporation
InventorsVladislav Vashchenko, Ann Concannon, Peter J. Hopper, Marcel ter Beek, Yuri Mirgorodsky
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Abstract
In a triggering ESD protection structure, the triggering voltage is reduced by introducing one or more corners or spikes into the p-n breakdown junction. This may be done by providing a polygate with a zig-zag pattern to define triangular corners in the drain or anode of the structure.
Claims6
An ESD protection structure comprising
- a drain, collector, or anode,
- a source, emitter or cathode, and
- a gate, the protection structure defining a p-n breakdown junction between the drain, collector or anode, and a region of opposite polarity, wherein the gate, when viewed in plan view, defines a zig-zag pattern that includes multiple sharp-cornered indentations and extensions to define multiple complementary sharp-cornered extensions and indentations in the drain, collector, or anode.
An ESD protection structure having a doped region of a first polarity connected to a positive terminal and forming a p-n junction with a region of opposite polarity, wherein the p-n junction defines a zig-zag pattern that includes multiple sharp-cornered indentations and extensions when viewed in plan view.
Dependencies are inferred from the claim text.