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US 7,115,527 B2Granted
Methods of etching an aluminum oxide comprising substrate, and methods of forming a capacitor
AssigneeMicron Technology, Inc.
InventorKevin R. Shea
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Abstract
This invention methods of etching an aluminum oxide comprising substrate, and methods of forming capacitors. In one implementation, a method of etching an aluminum oxide comprising substrate includes flowing water and ozone to aluminum oxide on the substrate, with at least one of the water and the ozone being at a temperature of at least 65° C. at the aluminum oxide effective to etch aluminum oxide from the substrate. In one implementation, aspects of the method are utilized in forming a capacitor.
Claims70
A method of etching an aluminum oxide-comprising substrate, comprising:
- providing an etching solution to aluminum oxide on the substrate, the etching solution consisting essentially of water, O2, and ozone, at least one of the water and the ozone being at a temperature of at least 65° C. at the aluminum oxide effective to etch aluminum oxide from the substrate.
A method of etching an aluminum oxide-comprising substrate, comprising:
- flowing water and ozone to aluminum oxide on the substrate, at least one of the water and the ozone being at a temperature of at least 65° C. at the aluminum oxide effective to etch aluminum oxide from the substrate, the etch occurring within a chamber, the ozone being fed to the chamber in a stream, ozone being present in the stream at greater than or equal to 190 mg/liter.
A method of etching an aluminum oxide-comprising substrate, comprising:
- flowing water and ozone to aluminum oxide on the substrate, at least one of the water and the ozone being at a temperature of at least 65° C. at the aluminum oxide effective to etch aluminum oxide from the substrate, the etch occurring within a chamber, the ozone being fed to the chamber in a stream, ozone being present in the stream at greater than or equal to 200 mg/liter.
A method of etching an aluminum oxide-comprising substrate, comprising:
- flowing water and ozone to aluminum oxide on the substrate, at least one of the water and the ozone being at a temperature of at least 65° C. at the aluminum oxide effective to etch aluminum oxide from the substrate, the etch occurring within a chamber, the ozone being fed to the chamber in a stream, ozone being present in the stream at from 190 mg/liter to 280 mg/liter.
A method of etching an aluminum oxide-comprising substrate, comprising:
- providing an aluminum oxide-comprising substrate within a chamber;
- and
- flowing water and ozone to aluminum oxide on the substrate within the chamber, the water and the ozone being at a temperature of at least 65° C. at the aluminum oxide effective to etch aluminum oxide from the substrate, the ozone being fed to the chamber in a stream, ozone being present in the stream at greater than or equal to 190 mg/liter, the stream being at a temperature below 40° C. where fed to the chamber, the water being fed to the chamber at a temperature above 65° C., the water heating the ozone within the chamber to a temperature of at least 65° at the a uminum oxide.
A method of etching an aluminum oxide-comprising substrate, comprising:
- providing an aluminum oxide-comprising substrate within a chamber;
- and
- flowing water and ozone to aluminum oxide on the substrate within the chamber, the water and the ozone being at a temperature from 85° C. to 100° C. at the aluminum oxide effective to etch aluminum oxide from the substrate, the ozone being fed to the chamber in a stream, the stream comprising O2, ozone being present in the stream at from 190 mg/liter to 280 mg/liter, the stream being at a temperature below 40° C. where fed to the chamber, the water being fed to the chamber at a temperature from 85° C. to 100° C., the water heating the ozone within the chamber to a temperature of at least 85° at the aluminum oxide.
A method of etching aluminum oxide from a substrate selectively relative to at least one of doped silicon dioxide, undoped silicon dioxide, titanium nitride, hafnium nitride, aluminum nitride, and polysilicon, the method comprising:
- providing a substrate within a chamber, the substrate comprising an aluminum oxide-comprising layer received over material comprising at least one of doped silicon dioxide, undoped silicon dioxide, titanium nitride, hafnium nitride, aluminum nitride, and polysilicon;
- and
- providing an etching solution to the aluminum oxide-comprising layer, the etching solution consisting essentially of water, O2, and ozone, the water and ozone being at a temperature of at least 65° C. at the aluminum oxide-comprising layer effective to etch aluminum oxide from the substrate, the material being exposed during at least some of the etch with the etch removing aluminum oxide selectively relative to the at least one of doped silicon dioxide, undoped silicon dioxide, titanium nitride, hafnium nitride, aluminum nitride, and polysilicon of the material.
A method of etching aluminum oxide from a substrate selectively relative to at least one of doped silicon dioxide, undoped silicon dioxide, titanium nitride, hafnium nitride, aluminum nitride, and polysilicon, the method comprising:
- providing a substrate within a chamber, the substrate comprising an aluminum oxide-comprising layer received over material comprising at least one of doped silicon dioxide, undoped silicon dioxide, titanium nitride, hafnium nitride, aluminum nitride, and polysilicon;
- and
- flowing water and ozone to the aluminum oxide-comprising layer, the water and ozone being at a temperature of at least 65° C. at the aluminum oxide-comprising layer effective to etch aluminum oxide from the substrate, the material being exposed during at least some of the etch with the etch removing aluminum oxide selectively relative to the at least one of doped silicon dioxide, undoped silicon dioxide, titanium nitride, hafnium nitride, aluminum nitride, and polysilicon of the material, the ozone being fed to the chamber in a stream, ozone being present in the strewn at greater than or equal to 190 mg/liter.
A method of forming a capacitor, comprising:
- providing an aluminum oxide-comprising layer laterally proximate a first capacitor electrode over a substrate, the first capacitor electrode comprising at least one of polysilicon, titanium nitride, hafnium nitride, and aluminum nitride;
- flowing water and ozone to the substrate, the water and ozone being at a temperature of at least 65° C. at the substrate effective to etch aluminum oxide from the substrate selectively relative to the at least one of polysilicon, titanium nitride, hafnium nitride, and aluminum nitride and effective to expose an outer lateral sidewall of the first capacitor electrode;
- forming a capacitor dielectric layer over the first capacitor electrode including its exposed outer lateral sidewall;
- and
- forming a second capacitor electrode over the capacitor dielectric layer.
2 more elements
A method of forming a capacitor, comprising:
- forming a silicon dioxide-comprising layer over a substrate;
- forming an opening within the silicon dioxide-comprising layer;
- forming an aluminum oxide-comprising layer within the opening;
- forming a first capacitor electrode comprising at least one of polysilicon, titanium nitride, hafnium nitride, and aluminum nitride within the opening, the aluminum oxide-comprising layer being received laterally intermediate the first capacitor electrode and the silicon dioxide-comprising layer within which the opening is formed;
- flowing water and ozone to the substrate, the water and ozone being at a temperature of at least 65° C. at the substrate effective to etch aluminum oxide from the substrate selectively relative to the silicon dioxide and the at least one of polysilicon, titanium nitride, hafnium nitride, and aluminum nitride and effective to expose an outer lateral sidewall of the first capacitor electrode;
- forming a capacitor dielectric layer over the first capacitor electrode including its exposed outer lateral sidewall;
- and
- forming a second capacitor electrode over the capacitor dielectric layer.
5 more elements
Dependencies are inferred from the claim text.