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US 7,115,519 B2Granted
Method for plasma treatment
AssigneeTokyo Electron Limited
InventorTomoyo Yamaguchi
Life of this patent
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Abstract
A method for plasma treatment etches an SiC layer with an increased etching rate and enhanced selectivities of SiC with respect to SiO2 and an organic layer. An etching gas is converted into plasma to etch SiC. The etching gas may include CHF3; CHF3 and N2, for example, a mixed gas of CHF3, N2 and Ar; or a material having C, H and F and a material having N but without any material having O.
Claims13
A method for plasma treatment, comprising the steps of:
- (a) arranging a substrate in a chamber, wherein the substrate includes an SiC layer and an SiO2 layer;
- and
- (b) introducing an etching gas into the chamber and converting the etching gas into plasma to etch selectively the SiC layer against the SiO2 layer, wherein the etching gas includes CHF3, as a main fluorocarbon component thereof, and N2,
- wherein a ratio of CHF3 flow rate to N2 flow rate in the etching gas is between about 0.4 and about 0.6, and
- wherein the SiC layer is etched at a rate of from 150 nm/mm or greater.
2 more elements
A method for plasma treatment, comprising the steps of:
- (a) arranging a substrate in a chamber, wherein the substrate includes an SiC layer;
- and
- (b) introducing an etching gas into the chamber and converting the etching gas into plasma to etch the SiC layer, wherein the etching gas includes CHF3, as a main fluorocarbon component thereof, and N2, the etching gas being essentially free from any material having O, wherein a ratio of CHF3 flow rate to N2 flow rate in the etching gas is between about 0.4 and about 0.6, and
- wherein the SiC layer is etched at a rate of from 150 nm/min or greater.
1 more element
Dependencies are inferred from the claim text.