Methods of forming semiconductor constructions
AssigneeMicron Technology, Inc.
InventorsWerner Juengling, Steven M. McDonald, Kunal R. Parekh
Life of this patent
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Abstract
The invention includes methods by which a fuse box of a semiconductor construction is fabricated to have a substantially uniform layer over fuses extending therein. In particular aspects, the invention includes methods in which one or more processing steps associated with fabrication and patterning of bond pads and redistribution layers is conducted simultaneously over a fuse box region to form and/or remove materials that are directly over the fuse box region.
Claims32
A method of forming a semiconductor construction, comprising:
- providing a semiconductor substrate having a fuse access region and a bond pad location, having a plurality of fuses extending into the fuse access region, and having an insulative material cap directly over the fuse access region;
- forming a bond pad over the bond pad location;
- forming a conductive material cap over the insulative material cap and directly over the fuse access region simultaneously with the formation of at least some of the bond pad;
- removing at least some of the conductive material cap from over the insulative material cap;
- prior to removing said at least some of the conductive material cap from over the insulative material cap, forming a redistribution layer in electrical connection with the bond pad and the conductive material cap;
- and
- patterning the redistribution layer simultaneously with the removing of said at least some of the conductive material cap.
A method of forming a semiconductor construction, comprising:
- providing a semiconductor substrate having a fuse box region, having one or more fuses that are at least partially within the fuse box region, and having a fuse box cap over the one or more fuses within the fuse box region;
- forming at least one access node over the substrate, the access node comprising one or more electrically conductive access node materials;
- forming a sacrificial cover material over the fuse box cap from at least one of the electrically conductive access node materials;
- forming a patterned material over the substrate, the patterned material having one or more first openings extending therethrough to one or more of said at least one access nodes and having a second opening extending therethrough to the sacrificial cover material;
- forming a redistribution layer over the patterned material and within the first and second openings;
- patterning the redistribution layer into one more redistribution lines, the patterning comprising exposure of the redistribution layer to etching conditions;
- and
- during the etching conditions utilized for patterning the redistribution layer, removing at least some of the sacrificial cover material.
A method of forming a semiconductor construct on, comprising:
- providing a semiconductor substrate having a fuse access region, having a plurality of fuses extending into the fuse access region, and having an insulative material cap directly over the fuse access region;
- forming at least one electrically conductive access node over the substrate and simultaneously forming an electrically conductive structure over the insulative material cap;
- forming a redistribution layer in physical contact with the access node and with the electrically conductive structure;
- and
- patterning the redistribution layer into one more redistribution lines and simultaneously removing at least some of the electrically conductive structure from over the insulative material cap.
Dependencies are inferred from the claim text.