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US 7,115,502 B2Granted
Structure and manufacturing process of localized shunt to reduce electromigration failure of copper dual damascene process
AssigneeIntel Corporation
InventorChia-Hong Jan
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Abstract
A method and structure to reduce electromigration failure of semiconductor interconnects. In various embodiments, the area around a via is selectively doped with metallic dopants. The method and resulting structure reduce electromigration failure without adding unnecessary, performance-degrading resistance.
Claims4
A method comprising:
- forming an electrically conductive layer;
- forming a dielectric layer on the electrically conductive layer;
- forming an opening in the dielectric layer, the opening exposing a portion of the electrically conductive layer;
- implanting a dopant into the electrically conductive layer through the opening in the dielectric layer;
- annealing the electrically conductive layer;
- and
- filling the opening in the dielectric layer with electrically conductive material,
- wherein annealing the electrically conductive layer precedes filling the opening in the dielectric layer with electrically conductive materials.
5 more elements
Dependencies are inferred from the claim text.