Method for fabricating an integrated circuit device with through-plating elements and terminal units

An integrated circuit device, where fabrication of the intergrated circuit decice comprises:

• a) providing an electrically conductive substrate;
• b) depositing an insulation layer on the substrate;
• c) etching depressions into the insulation layer which have a structure depth corresponding to a layer thickness of the insulation layer;
• d) depositing a contact-making layer onto the patterned insulation layer and onto the substrate in the depressions, the depressions having first lateral dimensions which are less than a layer thickness of the contact-making layer and second lateral dimensions which are significantly greater than the layer thickness;
• e) etching back the contact-making layer such that
• e1) the contact-making layer is preserved in the structures with the depressions which have the first lateral dimensions, and
• e2) the contact-making layer is removed in the structures with the depressions which have the second lateral dimensions;
• and
• f) depositing a connecting layer on the substrate in the depressions which have the second lateral dimensions on the patterned insulation layer and on the etched-back contact-making layer which is included in the depressions having the first lateral dimensions.