Technique for elimination of pitting on silicon substrate during gate stack etch using material in a non-annealed state
AssigneeMicron Technology, Inc.
InventorsPai-Hung Pan, Louie Liu, Ravi Iyer
Life of this patent
Estimating the term…
Abstract
A method for forming a gate stack which minimizes or eliminates damage to the gate dielectric layer and/or silicon substrate during the gate stack formation by the reduction of the temperature during formation. The temperature reduction prevents the formation of silicon clusters within the metallic silicide film in the gate stack which has been found to cause damage during the gate etch step. The present invention also includes methods for dispersing silicon clusters prior to the gate etch step.
Claims13
A method of forming a metallic silicide film and dielectric cap during a gate stack formation wherein the gate stack formation includes a polysilicon layer, the method comprising:
- forming a metallic silicide film in a non-annealed state over a polysilicon layer;
- forming a dielectric cap layer of silicon nitride on the metallic silicide film while the metallic silicide film is in a non-annealed state, and at a sufficiently low temperature that the metallic silicide film remains in the non-annealed state;
- and
- etching the polysilicon layer, the metallic silicide film, and the silicon nitride dielectric cap layer to form a dielectric cap having a lateral extent substantially similar to the lateral extent of the polysilicon layer and the metallic silicide film.
A method of forming a gate stack, comprising:
- forming a gate dielectric layer on a silicon substrate;
- forming a polysilicon layer on top of the gate dielectric layer;
- subjecting the polysilicon layer to an ion implantation of impurities;
- depositing a metallic silicide film in a non-annealed state atop the polysilicon layer;
- depositing a dielectric cap layer of silicon nitride over the metallic silicide film at a temperature below about 600° C., the metallic silicide film being in a non-annealed state prior to the depositing of the dielectric cap layer and remaining in a non-annealed state thereafter;
- and
- etching the polysilicon layer, the metallic silicide film, and the silicon nitride dielectric cap layer to form a dielectric cap having a lateral extent substantially similar to the lateral extent of the polysilicon layer and the metallic silicide film.
Dependencies are inferred from the claim text.