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US 7,115,489 B2Granted
Methods of growing epitaxial silicon
AssigneeMicron Technology, Inc.
InventorsNirmal Ramaswamy, Cem Basceri
Life of this patent
Estimating the term…
Abstract
Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided.
Claims60
A method of growing epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the base of the liner to create a confining tab and to expose the silicon substrate;
- and
- growing silicon epitaxially in the container.
1 more element
A method of growing epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the sidewalls and a portion of the base of the liner to create a confining tab and to expose the silicon substrate;
- and
- growing silicon epitaxially in the container.
1 more element
A method of growing epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is at the base of the container over the silicon substrate;
- etching the liner to create a confining tab and to expose the silicon substrate;
- and
- growing silicon epitaxially in the container.
1 more element
A method of growing epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the base of the liner to create a confining tab and to expose the silicon substrate;
- forming a plasma from a gas flow, wherein the gas flow comprises an etchant gas;
- exposing the silicon substrate to the plasma;
- and
- growing silicon epitaxially in the container.
3 more elements
A method of growing epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the sidewalls and a portion of the base of the liner to create a confining tab and to expose the silicon substrate;
- forming a plasma from a gas flow, wherein the gas flow comprises an etchant gas;
- exposing the silicon substrate to the plasma;
- and
- growing silicon epitaxially in the container.
3 more elements
A method of growing epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is at the base of the container over the silicon substrate;
- etching the liner to create a confining tab and to expose the silicon substrate;
- forming a plasma from a gas flow, wherein the gas flow comprises an etchant gas;
- exposing the silicon substrate to the plasma;
- and
- growing silicon epitaxially in the container.
3 more elements
A method for controlling bottom stacking fault propagation in epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the base of the liner to create a confining tab and to expose the silicon substrate;
- and
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled.
1 more element
A method for controlling bottom stacking fault propagation in epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the sidewalls and a portion of the base of the liner to create a confining tab and to expose the silicon substrate;
- and
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled.
1 more element
A method for controlling bottom stacking fault propagation in epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is at the base of the container over the silicon substrate;
- etching the liner to create a confining tab and to expose the silicon substrate;
- and
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled.
1 more element
A method for controlling bottom stacking fault propagation in epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the base of the liner to create a confining tab and to expose the silicon substrate;
- forming a plasma from a gas flow, wherein the gas flow comprises an etchant gas;
- exposing the silicon substrate to the plasma;
- and
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled.
3 more elements
A method for controlling bottom stacking fault propagation in epitaxial silicon substrate, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the sidewalls and a portion of the base of the liner to create a confining tab and to expose the silicon substrate;
- forming a plasma from a gas flow, wherein the gas flow comprises an etchant gas;
- exposing the silicon substrate to the plasma;
- and
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled.
3 more elements
A method for controlling bottom stacking fault propagation in epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is at the base of the container over the silicon substrate;
- etching the liner to create a confining tab and to expose the silicon substrate;
- forming a plasma from a gas flow, wherein the gas flow comprises an etchant gas;
- exposing the silicon substrate to the plasma;
- and
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled.
3 more elements
Dependencies are inferred from the claim text.