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US 7,112,288 B2Granted
Methods for inspection sample preparation
AssigneeTexas Instruments Incorporated
InventorsFred Y. Clark, Andrew L. Vance, David G. Farber
Life of this patent
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Abstract
Methods are provided for delineating different layers and interfaces for inspection of a semiconductor wafer, wherein a sectioned portion of a wafer is subjected to a reactive ion etch process before inspection using a scanning electron microscope.
Claims12
A method of inspecting a semiconductor wafer, comprising:
- sectioning the wafer to expose a sectioned surface of interest:
- etching the exposed sectioned surface using an anisotropic etch process;
- and
- inspecting the etched sectioned surface,
- wherein etching the exposed sectioned surface comprises performing a reactive ion etch process on the sectioned surface,
- wherein the reactive ion etch process comprises CF4, O2, and CHF3 gases, and
- wherein the reactive ion etch process comprises providing the CF4 gas at a flow rate of about 3.5 sccm or more and about 6.5 sccm or less, the O2 gas at a flow rate of about 2 sccm or more and about 4 sccm or less, and the CHF3 gas at a flow rate of about 28 sccm or more and about 52 sccm or less.
4 more elements
A method of inspecting a semiconductor wafer, comprising:
- sectioning the wafer to expose a sectioned surface of interest;
- etching the exposed sectioned surface using an anisotropic etch process;
- and
- inspecting the etched sectioned surface,
- wherein etching the exposed sectioned surface comprises performing a reactive ion etch process on the sectioned surface,
- wherein the reactive ion etch process comprises CF4, O2, and CHF3 gases, and
- wherein etching the exposed sectioned surface comprises performing the reactive ion etch process on the sectioned surface for about 2 seconds or more and about 4 seconds or less.
4 more elements
A method of delineating an interface between two horizontal layers of different materials in a semiconductor wafer, comprising:
- exposing an interior portion of the layers and the interface along a substantially vertical plane;
- and
- etching the exposed interior portion using an anisotropic etch process, wherein etching the exposed interior portion comprises etching the interior portion using CF4, O2, and CHF3 gases;
- and wherein the etching the exposed interior portion comprises:
- providing the CF4 gas at a flow rate of about 5 sccm, the O2 gas at a flow rate of about 3 sccm, and the CHF3 gas at a flow rate of about 40 sccm at a pressure of about 50 mTorr in an etching chamber;
- applying a first RF power of about 300 watts to a first electrode spaced from the exposed interior portion;
- and
- applying a second RF power of about 75 watts to a second electrode proximate the exposed interior portion.
5 more elements
Dependencies are inferred from the claim text.