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AssigneesAmd, Motorola, Inc.
InventorsMarilyn I. Wright, Srikanteswara Dakshina-Murthy, Kurt H. Junker, Kyle Patterson
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In the fabrication of semiconductor devices using the PECVD process to deposit hardmask material such as amorphous carbon, structure and process are described for reducing migration of species from the amorphous carbon which can damage an overlying photoresist. In one embodiment useful to 248 nm and 193 nm photolithography exposure wavelengths, amorphous carbon is plasma-deposited on a substrate to pre-defined thickness and pre-defined optical properties. A SiON layer is combined with a silicon-rich oxide layer, a silicon-rich nitride layer or a TEOS layer to create a capping layer resistant to species-migration. Layers are formulated to pre-determined thicknesses, refractive indices and extinction coefficients. The capping stacks constitute an effective etch mask for the amorphous carbon; and the hardmask properties of the amorphous carbon are not compromised. The disclosure has immediate application to fabricating polysilicon gates.
An etch mask structure formed over a device layer during fabrication of a semiconductor device, said etch mask structure comprising:
An etch mask structure formed over a device layer during fabrication of a semiconductor device using PECVD deposition processes, said etch mask structure comprising:
For use during a semiconductor device fabrication process, an intermediate structure formed over a deposited amorphous carbon layer in said device to retard migration of species of nitrogen and hydrogen from said deposited layer to an overlaid photoresist layer, said intermediate structure comprising:
In the fabrication of a semiconductor device comprising a device layer formed on a substrate, an interconnect layer providing circuit accesses to said device layer, and an amorphous carbon layer formed atop said interconnect layer, a method for retarding migration of species of nitrogen and hydrogen to a photoresist layer formed to pattern said interconnect layer, said method comprising
Dependencies are inferred from the claim text.